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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 PARTMARKING DETAIL 7 - SA BSS123 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Peak Gate-Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS VDGR ID IDM VGS VGSM Ptot Tj:Tstg MIN. VALUE 100 100 170 680 20 20 360 -55 to +150 SOT23 UNIT V V mA mA V V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS 100 VGS(th) IGSS IDSS 0.8 MAX. UNIT CONDITIONS. V ID=0.25mA, VGS=0V 2.8 50 15 60 10 6 V nA A A nA mS 20 9 4 10 10 15 25 pF pF pF ns ns ns ns ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=100V, VGS=0V VDS=100V, VGS=0V, T=125C(2) VDS=20V, VGS=0V VGS=10V, ID=100mA VDS=25V, ID=100mA 2.2 10 1 2 5 RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 80 120 VDS=25V, VGS=0V, f=1MHz VDD 30V, ID=280mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator For typical characteristics graphs see ZVN3310F datasheet. 3 - 70 |
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